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  Datasheet File OCR Text:
 Ordering number : ENN8185
MCH3219
MCH3219
Applications
*
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
* * * * * * *
Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm). High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8m) Conditions Ratings 100 100 50 6 1.0 3 200 0.7 150 --55 to +150 Unit V V V V A A mA W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100mA VCE=10V, IC=300mA 250 420 Conditions Ratings min typ max 0.1 0.1 400 MHz Unit A A
Marking : CP
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12505EA TS IM TB-00001034 No.8185-1/4
MCH3219
Continued from preceding page.
Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=10V, f=1MHz IC=500mA, IB=10mA IC=500mA, IB=10mA IC=10A, IE=0 IC=100A, RBE=0 IC=1mA, RBE= IE=10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 100 100 50 6 38 332 40 Ratings min typ 6 105 0.81 160 1.2 max Unit pF mV V V V V V ns ns ns
Package Dimensions
unit : mm 2194A
0.25
Switching Time Test Circuit
0.3 3
0.15
PW=20s D.C.1% INPUT
IB1 OUTPUT IB2 VR 50 RB
2.1
1.6
RL + + 470F VCC=25V
0.25
0.65 2.0
(Bottom view)
0.07
2
1
100F 3 VBE= --5V
1 : Base 2 : Emitter 3 : Collector
1 2
(Top view)
IC=20IB1= --20IB2=500mA
0.85
SANYO : MCPH3
50mA 40mA 30 mA
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
IC -- VCE
A 20
mA
1.0
IC -- VBE
VCE=2V
10mA
8mA
6mA 5mA 4mA 3mA
2mA
0.8
15m
Collector Current, IC -- A
Collector Current, IC -- A
0.6
Ta= --2 5
0 0.1 0.2 0.3 0.4 0.5 0.6
0.4
C
0.2
IB=0
0.2 0.4 0.6 0.8 1.0 IT08995
0 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
75C
IT08996
1mA
25C
No.8185-2/4
MCH3219
1000
hFE -- IC
VCE=2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
3 2
VCE(sat) -- IC
IC / IB=20
7 5
DC Current Gain, hFE
Ta=75C
3
0.1 7 5
25C
--25C
2
3 2
C 25
Ta
=7
C 5
5C --2
100 7 0.01
2
3
5
7
0.1
2
3
5
7
Collector Current, IC -- A
5 3 2
2 1.0 IT08997
0.01 0.01
2
3
5
7
0.1
2
3
5
7
VCE(sat) -- IC
Collector Current, IC -- A
2
2 1.0 IT08998
VBE(sat) -- IC
IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V
IC / IB=50
1.0
25C
Ta= --25C
75C
0.1 7 5 3 2
25C
Ta=
C 75
7
C --25
5
3
0.01 0.01
2
3
5
7
0.1
2
3
5
7
Collector Current, IC -- A
1000
2 1.0 IT08999
2 0.01
2
3
5
7
0.1
2
3
5
7
1.0
2 IT09000
f T -- IC
Collector Current, IC -- A
3
Cob -- VCB
VCE=10V Gain-Bandwidth Product, f T -- MHz
7 5
f=1MHz
3 2
Output Capacitance, Cob -- pF
2
10 7 5
100 7 5 0.01
3
2
3
5
7
0.1
2
3
5
7
Collector Current, IC -- A
5 3 2
2 1.0 IT09001
2 0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
ASO
Collector-to-Base Voltage, VCB -- V
0.8
IT09002
PC -- Ta
ICP=3A
1m s
10s
50
Collector Dissipation, PC -- W
0
0.7
100 s
Collector Current, IC -- A
1.0 7 5 3 2 0.1 7 5 3 2
IC=1A
DC
s
10
M
0.6 0.5 0.4 0.3 0.2 0.1 0
m
10
op er
s
ou
nt
0m
ed
s
on
ac
er
ati
am
on
ic
bo
ar
d
(6
00
m
0.01 0.1
Ta=25C Single pulse Mounted on a ceramic board (600mm2!0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7
m2 ! 0.
8m
m
)
160
0
20
40
60
80
100
120
140
Collector-to-Emitter Voltage, VCE -- V
IT09003
Ambient Temperature, Ta -- C
IT09004
No.8185-3/4
MCH3219
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice.
PS No.8185-4/4


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